OptiMOS™ fast diode 200 V/220 V/250 V/300 V

OptiMOS™ Fast Diode (FD) power MOSFETs are optimized for hard commutation applications due to advancements in the MOSFET’s body diode

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概述

OptiMOS™ 快恢复二极管 (FD) 系列是英飞凌最新一代的 200 V、220 V、250 V 和 300 V 功率 MOSFET，针对车身二极管的硬换向进行了优化。 该器件提高了硬换向耐久性，使其能够在要求苛刻的条件下使用，例如更高的 dv/dt、di/dt 和电流密度，从而简化了设计过程。

关键特性

  • 硬换向的耐用性
  • 最高的系统可靠性
  • 优化了硬开关特性
  • 降低系统成本
  • 增强了 175°C 的承受能力
  • 热稳定性
  • 低 RDS(on)、Qg 和 Qrr
  • 高效率和功率密度
  • 符合 RoHS 标准-无卤素

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Advantages of OptiMOS™ Fast Diode MOSFETs

The OptiMOS™ FD MOSFET family is the perfect choice for hard switching applications such as telecom, industrial power supplies, Class D audio amplifiers, motor control, and DC-AC inverters. The OptiMOS™ FD family provides a reverse recovery charge (Qrr) optimized solution for customers striving for the highest standards of performance. OptiMOS™ FD 200 V, 220 V, 250 V, and 300 V achieve a 40% Qrr reduction compared to OptiMOS™ 3. 

Low Qrr improves the system reliability by providing a significant reduction of voltage overshoot which minimizes the need for a snubber circuit, resulting in less engineering cost and effort. OptiMOS™ FD in SuperSO8 furthermore offers an enhanced temperature capability of 175°C to support higher-power-density designs and improved robustness.

What is hard commutation?

In switching power supplies or inverters, MOSFETs are used as the main switch element to deliver power efficiently to an inductive type of load. Switching converters sometimes have a sudden voltage spike seen across the inductive load when its supply current is suddenly reduced or interrupted. The inherent body diode of the MOSFET takes on the majority of this spike, protecting the rest of the circuit by acting as a snubber diode or freewheeling diode. Since the diode is inherent to the MOSFET, it provides this freewheeling capability at no extra component cost. 


Hard commutation

To commutate means to stop the current flow in the body diode of a MOSFET. In the case of hard commutation, the MOSFET body diode experiences reverse recovery at turn-off due to the large amounts of current remaining in the body diode at turn-off induced from the voltage spike. This is commonly found in hard switching, half-, and full-bridge topologies.

Qrr and its relationship to hard commutation

The reverse current potentially causes a shoot-through, and Qrr yields additional loss and overshoot. This complete switching event, which involves the forward-current-carrying body diode of a MOSFET experiencing reverse recovery during turn-off, is categorized as hard commutation.


Qrr has a direct impact on the overshoot level

The higher Qrr, the higher the overshoot. Severe overshoot puts the MOSFET into an avalanche, which may lead to device degradation. Devices with lower Qrr are less susceptible to a hard commutation event. Therefore, Qrr is a good indicator of device ruggedness in hard commutation.

Qgrr can be reduced at the device level regardless of the application condition, thereby increasing the ruggedness. Infineon’s OptiMOS™ 3 FD (Fast Diode) MOSFET family of devices provides a reverse recovery charge (Qrr) - optimized solution with a 40% reduction in Qrr compared to OptiMOS™ 3.

Advantages of OptiMOS™ Fast Diode MOSFETs

The OptiMOS™ FD MOSFET family is the perfect choice for hard switching applications such as telecom, industrial power supplies, Class D audio amplifiers, motor control, and DC-AC inverters. The OptiMOS™ FD family provides a reverse recovery charge (Qrr) optimized solution for customers striving for the highest standards of performance. OptiMOS™ FD 200 V, 220 V, 250 V, and 300 V achieve a 40% Qrr reduction compared to OptiMOS™ 3. 

Low Qrr improves the system reliability by providing a significant reduction of voltage overshoot which minimizes the need for a snubber circuit, resulting in less engineering cost and effort. OptiMOS™ FD in SuperSO8 furthermore offers an enhanced temperature capability of 175°C to support higher-power-density designs and improved robustness.

What is hard commutation?

In switching power supplies or inverters, MOSFETs are used as the main switch element to deliver power efficiently to an inductive type of load. Switching converters sometimes have a sudden voltage spike seen across the inductive load when its supply current is suddenly reduced or interrupted. The inherent body diode of the MOSFET takes on the majority of this spike, protecting the rest of the circuit by acting as a snubber diode or freewheeling diode. Since the diode is inherent to the MOSFET, it provides this freewheeling capability at no extra component cost. 


Hard commutation

To commutate means to stop the current flow in the body diode of a MOSFET. In the case of hard commutation, the MOSFET body diode experiences reverse recovery at turn-off due to the large amounts of current remaining in the body diode at turn-off induced from the voltage spike. This is commonly found in hard switching, half-, and full-bridge topologies.

Qrr and its relationship to hard commutation

The reverse current potentially causes a shoot-through, and Qrr yields additional loss and overshoot. This complete switching event, which involves the forward-current-carrying body diode of a MOSFET experiencing reverse recovery during turn-off, is categorized as hard commutation.


Qrr has a direct impact on the overshoot level

The higher Qrr, the higher the overshoot. Severe overshoot puts the MOSFET into an avalanche, which may lead to device degradation. Devices with lower Qrr are less susceptible to a hard commutation event. Therefore, Qrr is a good indicator of device ruggedness in hard commutation.

Qgrr can be reduced at the device level regardless of the application condition, thereby increasing the ruggedness. Infineon’s OptiMOS™ 3 FD (Fast Diode) MOSFET family of devices provides a reverse recovery charge (Qrr) - optimized solution with a 40% reduction in Qrr compared to OptiMOS™ 3.

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